Porous Silicon Formation by Electrochemical Etching

Porous silicon (PSi) is used as an effective material in biomedicine, sensors, solar cells, electrochemical energy, microelectronics, and nanotechnology. Considering the dependence of PSi functional properties on pore geometry porous layer architecture, it important to develop methods for controlled formation. After all, “procession” method obtaining ⟶ architecture PSi, decisive role belongs first participant. Among most methods, etching suitable controllability processes nucleation growth pores since can be using value current density, results are easily reproduced. This work analyses literature two types formation by anodic (1) surface (2) surface, modified with metal nanostructures. A modern explanation process dissolution forming a solutions containing HF presented. The influence such main factors its morphology analyzed: composition electrolyte each component it; anode density supply (stationary, pulsed); duration; exposure lighting; temperature. Considerable attention paid illustration alcohols organic aprotic solvents geometry. MNPs metallic nanostructures localized metal-activated semiconductor analyzed.